The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2000
Filed:
Sep. 04, 1998
Applicant:
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438308 ; 438592 ; 438928 ;
Abstract
Methods are disclosed for depositing an in situ polysilicon layer on the back of a semiconductor wafer to reduce the temperature at the edge of the wafer during rapid thermal annealing (RTA). The reduced temperature results in decreased boron penetration at the edge of the wafer and a more uniform silicide resistance and threshold voltage across the wafer.