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For the Inventor, By the Inventor

Hsin-Chu, Taiwan

Jiaw-Ren Shih

USPTO Granted Patents = 60 

Average Co-Inventor Count = 3.2

ph-index = 12

Forward Citations = 558(Granted Patents)

Forward Citations (Not Self Cited) = 556(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Hsiu-Chu, TW (1998)
  • Tou Liu, TW (1999 - 2001)
  • Tsing-chu, TW (2008)
  • Hsin-chu, TW (1996 - 2023)
  • Hsinchu, TW (2024)

Company Filing History:

goldMedal60 out of 40,927 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 1996-2024

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Areas of Expertise:
Fin Field Effect Transistor
Thermoelectric Devices
Electrostatic Discharge Protection
Semiconductor Structures
Bipolar-Based SCR
Decoupling Capacitor
CMOS I/O Structures
Plasma Damage Protection
Current Distribution SCR
Hot Carrier Lifetime
Temperature Controller
Deep Sub-Micron Process
60 patents (USPTO):Explore Patents
1. 12046638 - Fin field effect transistor (FinFET) device having position-dependent heat generation (2024-07-23),
2. 11631796 - Integrated thermoelectric devices in Fin FET technology (2023-04-18),
3. 11616124 - Method of making fin field effect transistor (FinFET) device (2023-03-28),
4. 11424399 - Integrated thermoelectric devices in Fin FET technology (2022-08-23),
5. 11107889 - Fin field effect transistor (FinFET) device having position-dependent heat generation (2021-08-31),
6. 10978440 - Circuit layout method (2021-04-13),
7. 10553494 - Breakdown resistant semiconductor apparatus and method of making same (2020-02-04),
8. 10403621 - Circuit layout, layout method and system for implementing the method (2019-09-03),
9. 10032869 - Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the same (2018-07-24),
10. 9977072 - Semiconductor structure and method for operating the same (2018-05-22),
11. 9875964 - Semiconductor device components and methods (2018-01-23),
12. 9691894 - Transistor having gate, first metal-containing material and second metal-containing material with different work functions (2017-06-27),
13. 9373712 - Transistor and method of manufacturing the same (2016-06-21),
14. 8648592 - Semiconductor device components and methods (2014-02-11),
15. 8288822 - ESD protection structures on SOI substrates (2012-10-16),

Title: Innovations by Jiaw-Ren Shih in Semiconductor Technology

Introduction

Jiaw-Ren Shih is a prolific inventor based in Hsin-Chu, Taiwan, with an impressive portfolio of 60 patents to his name. His contributions to the field of semiconductor technology have significantly advanced the development of modern electronic devices. Shih is particularly noted for his innovations involving Fin field effect transistors (FinFET), which have become essential in driving the efficiency and performance of next-generation integrated circuits.

Latest Patents

Among Shih's most recent patents are groundbreaking technologies related to FinFET devices. One notable patent describes a FinFET device that features position-dependent heat generation. This semiconductor device consists of a substrate with a uniform dielectric material layer, combined with two distinct pluralities of fins that vary in height. The design optimizes heat generation, potentially improving overall device performance.

Another significant patent discusses the integration of thermoelectric devices within FinFET technology. This innovation allows for enhanced thermal management in semiconductor devices, featuring a fin structure and connecting layers that facilitate heat transfer based on the direction of current flow. Such technological advancements are remarkable, demonstrating Shih's deep understanding of semiconductor behavior and thermal dynamics.

Career Highlights

Jiaw-Ren Shih has enjoyed a successful career at Taiwan Semiconductor Manufacturing Company Limited (TSMC), where he has focused on the research and development of advanced semiconductor technologies. His work has not only contributed to the company’s leadership in the industry but also positioned him as a key figure in the innovation landscape of semiconductor design.

Collaborations

Throughout his career, Shih has collaborated with esteemed colleagues such as Jian-Hsing Lee and Shui-Hung Chen. These collaborations have likely fostered an environment of innovation, allowing for the exchange of ideas and accelerating advancements in their collective research efforts.

Conclusion

In conclusion, Jiaw-Ren Shih's remarkable contributions to the field of semiconductor technologies highlight his role as a leading inventor. With a remarkable 60 patents under his belt, his recent innovations in FinFET technology demonstrate a commitment to enhancing the performance of electronic devices. Shih's work continues to inspire future advancements that push the boundaries of semiconductor engineering.

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