Transistor having gate, first metal-containing material and second metal-containing material with different work functions

Abstract

A transistor includes source region and drain regions, a channel region, a drift region, a gate, a dummy gate, a gate dielectric layer and an interconnection line. The source and drain regions of a first conductivity type are in a substrate. The channel region of a second conductivity type is in the substrate and surrounds the source region. The drift region of the first conductivity type is beneath the drain region and extends toward the channel region. The gate is over the substrate and overlapped with the channel region and the drift region. The dummy gate is over the drift region and laterally adjacent to the gate. The gate dielectric layer is between the gate and the substrate and between the dummy gate and the drift region. The interconnection line is electrically connected to the dummy gate and configured to provide a voltage potential thereto.