The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2020

Filed:

May. 01, 2017
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Jhong-Sheng Wang, Taichung, TW;

Ting-Sheng Huang, Hsinchu, TW;

Jiaw-Ren Shih, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 21/70 (2006.01); H01L 21/84 (2006.01); H01L 21/8242 (2006.01); H01L 21/8238 (2006.01); H01L 29/49 (2006.01); H01L 27/092 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/823842 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 27/1203 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/42392 (2013.01); H01L 29/4908 (2013.01); H01L 29/785 (2013.01); H01L 29/78618 (2013.01); H01L 29/78621 (2013.01); H01L 29/78696 (2013.01); H01L 21/823814 (2013.01); H01L 2029/7857 (2013.01);
Abstract

A semiconductor device includes a substrate, a first transistor on the substrate, and a second transistor on the substrate. The first transistor has a first threshold voltage, and a channel region and source/drain regions of the first transistor are N-type. The second transistor has a second threshold voltage, a channel region of the second transistor is N-type and source/drain regions of the second transistor are P-type, and an absolute value of the first threshold voltage is substantially equal to an absolute value of the second threshold voltage.


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