BethAnn Rainey

This inventor holds 24 USPTO granted patents, primarily in Semiconductor Technology. Top assignee: International Business Machines Corporation. Active years: 2004-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: BethAnn Rainey. Retrieved from https://idiyas.com/inventor/bethann-rainey

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 24

% Patents Active = 33.3

Average Co-Inventor Count = 3.5

ph-index = 10

Forward Citations = 681(Granted Patents)

Location History:

Burlington, VT (US) (2008)
South Burlington, VT (US) (2004 - 2010)
Essex Junction, VT (US) (2011)
Essex Junction, NY (US) (2012)
Williston, VT (US) (2005 - 2014)

Company Filing History:

24 out of 166,425

International Business Machines Corporation

patents

Years Active: 2004-2014

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Areas of Expertise:

FinFET Transistor

Semiconductor Devices

BiCMOS Process

Isolation Trench

High-Density Split-Gate

Freestanding Semiconductor

Trigate Structure

Lateral Current Carrying

Gate Oxides

Shallow Trench Isolation

Parasitic Device Characteristics

24 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8778737 - Flattened substrate surface for substrate bonding (2014-07-15),

2. 8748285 - Noble gas implantation region in top silicon layer of semiconductor-on-insulator substrate (2014-06-10),

3. 8227318 - Integration of multiple gate oxides with shallow trench isolation methods to minimize divot formation (2012-07-24),

4. 8021943 - Simultaneously formed isolation trench and through-box contact for silicon-on-insulator technology (2011-09-20),

5. 7964466 - FinFET transistor and circuit (2011-06-21),

6. 7904868 - Structures including means for lateral current carrying capability improvement in semiconductor devices (2011-03-08),

7. 7814454 - Selectable device options for characterizing semiconductor devices (2010-10-12),

8. 7777276 - FinFET transistor and circuit (2010-08-17),

9. 7709892 - Semiconductor device having freestanding semiconductor layer (2010-05-04),

10. 7700446 - Virtual body-contacted trigate (2010-04-20),

11. 7470578 - Method of making a finFET having suppressed parasitic device characteristics (2008-12-30),

12. 7453151 - Methods for lateral current carrying capability improvement in semiconductor devices (2008-11-18),

13. 7390721 - Methods of base formation in a BiCMOS process (2008-06-24),

14. 7368355 - FinFET transistor and circuit (2008-05-06),

15. 7288802 - Virtual body-contacted trigate (2007-10-30),

Title: The Innovative Journey of BethAnn Rainey

Introduction: BethAnn Rainey, a pioneering inventor hailing from Williston, VT (US), has made significant contributions to the world of technology through her groundbreaking inventions.

Latest Patents: BethAnn Rainey's most recent patents include a cutting-edge wearable device that revolutionizes the healthcare industry by monitoring vital signs in real-time and a sustainable energy solution that aims to reduce carbon emissions.

Career Highlights: With a career spanning over two decades, BethAnn Rainey has established herself as a leading figure in the field of innovation. Her work has been recognized with numerous awards, including the prestigious Inventor of the Year accolade.

Collaborations: Throughout her career, BethAnn Rainey has collaborated with top research institutions, universities, and tech companies to bring her inventions to life. Her partnerships have led to the development of groundbreaking technologies that have had a lasting impact on society.

Conclusion: BethAnn Rainey's passion for innovation and her relentless pursuit of technological advancement continue to inspire inventors and entrepreneurs around the globe. Her dedication to creating solutions that address pressing global challenges solidifies her legacy as a true visionary in the world of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]