This inventor holds 12 USPTO granted patents. Top assignee: Nec Corporation. Active years: 1998-2003.
Company Filing History:
Years Active: 1998-2003
Title: Atsuki Ono: Innovator in Semiconductor Technology
Introduction
Atsuki Ono is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. His work focuses on improving the performance and reliability of semiconductor devices, particularly in the manufacturing of MOSFETs.
Latest Patents
One of his latest patents is a method of forming source/drain (S/D) extension regions and pocket regions based on a formulated relationship between design and measured values of gate length. This innovative approach allows for the adjustment of impurity doses injected into S/D extension regions or pocket regions, ensuring that the characteristics of the transistor align with design values. Another notable patent involves a method for manufacturing a semiconductor device that includes a silicide layer. This method enhances the formation of cobalt silicide layers on polysilicon gate electrodes and source/drain regions, resulting in MOSFETs with excellent short-channel characteristics and higher reliability.
Career Highlights
Atsuki Ono is currently employed at NEC Corporation, where he continues to push the boundaries of semiconductor technology. His expertise in the field has led to advancements that benefit various applications in electronics.
Collaborations
Throughout his career, Atsuki has collaborated with notable colleagues such as Kiyotaka Imai and Nobuaki Hamanaka. These partnerships have fostered innovation and contributed to the success of their projects.
Conclusion
Atsuki Ono's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the development of reliable and efficient electronic devices.