The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2002
Filed:
Aug. 22, 2000
Atsuki Ono, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A section separator region is formed in a semiconductor substrate in which a p-type well region has been formed, to separate the substrate into an I/O section and a core section. An oxide film and a plysilicon film are form at the I/O section, and pre-formation treatment is carried out. Then, an oxide film is formed over the exposed surface by the thermal oxidization. A metal film is formed on the oxide film. The metal film on the I/O section is moved. The polysilicon film and the metal film are patterned to be gate electrodes. Then, ion implantation is carried out to implant impurity into the exposed surface to form source/drain regions corresponding to the gate electrodes respectively.