The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2001
Filed:
Nov. 04, 1999
Applicant:
Inventor:
Atsuki Ono, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/14763 ; H01L 2/1302 ; H01L 2/1461 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/14763 ; H01L 2/1302 ; H01L 2/1461 ;
Abstract
In manufacturing a MOS field effect transistor having a gate oxide film with a thickness of 3 nm or less, a deposition treatment or the like is performed under the condition that the substrate temperature is 650 to 770° C., and thereafter an annealing treatment is carried out under the condition that the substrate temperature is 900 to 1100° C.