The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 03, 2000
Filed:
Jun. 23, 1998
Atsuki Ono, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device includes the step of forming a gate electrode on a semiconductor substrate via a gate insulating film and the step of forming a first insulating film on side surfaces of the gate electrode and an upper surface of the semiconductor substrate. Also the method includes the step of forming a second insulating film on the first insulating film and the step of etching back the first and second insulating films to form side walls of the gate electrode each of which includes layers of the first and second insulating films. The method includes the step of etching the first insulating films of the side walls to remain a part of the first insulating film layers.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile