The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 1998
Filed:
Dec. 19, 1996
Applicant:
Inventor:
Atsuki Ono, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257344 ; 257382 ; 257408 ; 257410 ; 257900 ;
Abstract
Elevated source and drain regions epitaxially grown on both sides of a gate structure cause a dopant impurity to form an extremely shallow p-n junctions in a semiconductor substrate so as to prevent a field effect transistor from a short channel effect, and side wall spacers include pad layers of silicon nitride and spacer layers of silicon oxide formed on the pad layers so that the elevated source and drain regions form boundaries to the pad layers without a facet and a silicon layer on the spacer layers.