New Providence, NJ, United States of America

Ashok K Sinha

This inventor holds 18 USPTO granted patents, primarily in Semiconductor Fabrication. Top assignees: Bell Telephone Laboratories, At&t Bell Laboratories, American Telephone & Telegraph Co., At&t Bell Laboratories. Active years: 1976-1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ashok K Sinha. Retrieved from https://idiyas.com/inventor/ashok-k-sinha-abdy776n

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.7

ph-index = 14

Forward Citations = 728(Granted Patents)


Location History:

  • Murray Hill, NJ (US) (1976 - 1979)
  • New Providence, NJ (US) (1979 - 1987)
  • Allentown, PA (US) (1986 - 1994)

Company Filing History:


Years Active: 1976-1994

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Areas of Expertise:
Metallization
Integrated Circuits
Semiconductor Devices
Low Defect Density
Oxide Layers
Annealing Processes
Polysilicon Devices
Radiation Mask Structure
Cobalt Silicide
Vertical Geometry
Ohmic Contacts
Hydrogen Annealing
18 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Ashok K Sinha in Semiconductor Technology**

Introduction

Ashok K Sinha is a distinguished inventor based in New Providence, NJ, known for his significant contributions to semiconductor technology. With a remarkable portfolio of 18 patents, he has pioneered several innovations that have advanced the field significantly. His work primarily focuses on metallization processes and insulation methods essential for enhancing the performance of semiconductor devices.

Latest Patents

Among his latest patents, Ashok K Sinha has developed innovative techniques instrumental in the fabrication of semiconductor devices. One such patent introduces a low-temperature chemical vapor deposition process utilized to encapsulate aluminum conductors on silicon substrates, forming bimetallic conductors with refractory tungsten material. Another notable invention involves a multilayer insulation method for semiconductor integrated circuit structures, which includes a plasma planarized silicon dioxide layer, enhancing the insulation between first and second levels of aluminum metallization.

Career Highlights

Sinha has had a noteworthy career with prominent institutions. He has worked with Bell Telephone Laboratories and AT&T Bell Laboratories, where he contributed to cutting-edge research and development projects. His inventions not only demonstrate his technical proficiency but also reflect his commitment to innovation within the semiconductor industry.

Collaborations

Throughout his career, Ashok has collaborated with esteemed colleagues, notably Hyman J Levinstein and Shyam P Murarka. These collaborations have not only helped refine his inventions but have also significantly impacted the advancement of semiconductor technologies through shared expertise and innovative thinking.

Conclusion

Ashok K Sinha's extensive patent portfolio and collaborative efforts underline his role as a pivotal figure in semiconductor innovation. His commitment to advancing technology continues to influence the industry, providing valuable insights and techniques that shape the future of semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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