The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 24, 1979
Filed:
Oct. 11, 1977
Applicant:
Inventors:
Hyman J Levinstein, Berkeley Heights, NJ (US);
Ashok K Sinha, Murray Hill, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01I / ;
U.S. Cl.
CPC ...
148-15 ; 357 52 ;
Abstract
Variations in threshold voltage of Metal-Oxide-Silicon (MOS) structures are attenuated by the inclusion in the fabrication process of a hydrogen anneal step using a temperature range of 650 degrees C.ltoreq.T.ltoreq.950 degrees C. This anneal step is designed to be the last step in the fabrication process which is performed at temperatures above 600 degrees C.