The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1982
Filed:
Aug. 04, 1980
Applicant:
Inventors:
Avid Kamgar, Millington, NJ (US);
Ashok K Sinha, New Providence, NJ (US);
Assignee:
Bell Telephone Laboratories, Incorporated, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 148187 ; 357 23 ; 357 91 ; 427 82 ;
Abstract
A silicon device can be made more resistant to the destructive effects of ionizing radiation by a double annealing; the first annealing to a temperature of the order of 400 degrees C. in hydrogen, the second annealing also to a temperature of 400 degrees C. at a time when the device is not sealed against escape of hydrogen.