The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 1977

Filed:

Jun. 15, 1976
Applicant:
Inventors:

Robert Pang Chang, Warren, NJ (US);

Ashok Kumar Sinha, Murray Hill, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B01K / ;
U.S. Cl.
CPC ...
204164 ; 250531 ;
Abstract

An amorphous, stoichiometric, native, semiconductor oxide layer, with a sharp interface between the oxide layer and the substrate, is grown by directing electrons toward a semiconductor substrate in the presence of oxygen. The source of electrons may be a simple filament. This invention may be implemented with standard plasma growth techniques by extracting the electrons from the plasma production region and directing them to the substrate.


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