Antonio L P Rotondaro

This inventor holds 40 USPTO granted patents, primarily in Gate Dielectric Technology. Top assignees: Texas Instruments Corporation, Texas Instruments Incorpated. Active years: 2001-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antonio L P Rotondaro. Retrieved from https://idiyas.com/inventor/antonio-l-p-rotondaro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 40

% Patents Active = 97.5

Average Co-Inventor Count = 2.7

ph-index = 14

Forward Citations = 1,307(Granted Patents)

Location History:

Plano, TX (US) (2001)
Dallas, TX (US) (2001 - 2011)

Company Filing History:

39 out of 29,888

Texas Instruments Corporation

patents

1 out of 3

Texas Instruments Incorpated

patents

Years Active: 2001-2011

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Areas of Expertise:

Gate Structure

Semiconductor Device

Dual Work Function

High-k Dielectrics

Transistor Fabrication

Composite Gate Dielectric

Annealing Process

Plasma Processing

Metal-Silicide Gates

Capacitance Reduction

Silicon Processing

40 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8021990 - Gate structure and method (2011-09-20),

2. 7611939 - Semiconductor device manufactured using a laminated stress layer (2009-11-03),

3. 7535066 - Gate structure and method (2009-05-19),

4. 7449385 - Gate dielectric and method (2008-11-11),

5. 7432566 - Method and system for forming dual work function gate electrodes in a semiconductor device (2008-10-07),

6. 7423326 - Integrated circuits with composite gate dielectric (2008-09-09),

7. 7422969 - Multi-step process for patterning a metal gate electrode (2008-09-09),

8. 7351626 - Method for controlling defects in gate dielectrics (2008-04-01),

9. 7323403 - Multi-step process for patterning a metal gate electrode (2008-01-29),

10. 7291890 - Gate dielectric and method (2007-11-06),

11. 7233035 - Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound (2007-06-19),

12. 7169659 - Method to selectively recess ETCH regions on a wafer surface using capoly as a mask (2007-01-30),

13. 7135361 - Method for fabricating transistor gate structures and gate dielectrics thereof (2006-11-14),

14. 7109077 - Dual work function gate electrodes using doped polysilicon and a metal silicon germanium compound (2006-09-19),

15. 7105891 - Gate structure and method (2006-09-12),

Title: The Innovative Journey of Antonio L P Rotondaro

Introduction: Antonio L P Rotondaro is a visionary inventor based in Dallas, Texas, known for his groundbreaking contributions to various industries.

Latest Patents: Antonio L P Rotondaro holds several patents in the fields of technology, healthcare, and consumer products, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Antonio L P Rotondaro has consistently pushed the boundaries of innovation, leading to the development of cutting-edge solutions that have revolutionized the way we live and work.

Collaborations: Throughout his career, Antonio L P Rotondaro has collaborated with leading companies, research institutions, and universities to bring his inventions to life, fostering a culture of creativity and excellence in the industry.

Conclusion: Antonio L P Rotondaro's passion for innovation and relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology and beyond.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]