The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2008
Filed:
Sep. 26, 2007
Applicants:
Antonio L. P. Rotondaro, Dallas, TX (US);
Deborah J. Riley, Richardson, TX (US);
Trace Q. Hurd, Plano, TX (US);
Inventors:
Antonio L. P. Rotondaro, Dallas, TX (US);
Deborah J. Riley, Richardson, TX (US);
Trace Q. Hurd, Plano, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a method for patterning a metal gate electrode and a method for manufacturing an integrated circuit including the same. The method for patterning the metal gate electrode, among other steps, includes forming a metal gate electrode layer () over a gate dielectric layer () located on a substrate (), and patterning the gate electrode layer () using a combination of a dry etch process () and a wet etch process ().