The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 14, 2006
Filed:
Dec. 11, 2003
Mark R. Visokay, Richardson, TX (US);
Luigi Colombo, Dallas, TX (US);
James J. Chambers, Dallas, TX (US);
Antonio L. P. Rotondaro, Dallas, TX (US);
Haowen Bu, Plano, TX (US);
Mark R. Visokay, Richardson, TX (US);
Luigi Colombo, Dallas, TX (US);
James J. Chambers, Dallas, TX (US);
Antonio L. P. Rotondaro, Dallas, TX (US);
Haowen Bu, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
Methods are disclosed for treating deposited gate dielectric materials, in which the deposited dielectric is subjected to one or more non-oxidizing anneals to densify the material, one or more oxidizing anneals to mitigate material defects, and to a nitridation process to introduce nitrogen into the gate dielectric. The annealing may be performed before and/or after the nitridation to mitigate deposition and/or nitridation defects and to densify the material while mitigating formation of unwanted low dielectric constant oxides at the interface between the gate dielectric and the semiconductor substrate.