The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2008
Filed:
Dec. 18, 2003
Luigi Colombo, Dallas, TX (US);
James J. Chambers, Dallas, TX (US);
Mark R. Visokay, Richardson, TX (US);
Antonio L. P. Rotondaro, Dallas, TX (US);
Luigi Colombo, Dallas, TX (US);
James J. Chambers, Dallas, TX (US);
Mark R. Visokay, Richardson, TX (US);
Antonio L. P. Rotondaro, Dallas, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for improving high-κ gate dielectric film () properties. The high-κ film () is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient () with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second anneal is performed in an oxidizing ambient () with a low partial pressure of reducer to remove defects and impurities.