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For the Inventor, By the Inventor

Austin, TX, United States of America

Anis Mahmoud Jarrar

This inventor holds 27 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Integrated Circuit Design. Top assignees: Freescale Semiconductor,inc., Nxp USA, Inc.. Active years: 2008-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anis Mahmoud Jarrar. Retrieved from https://idiyas.com/inventor/anis-mahmoud-jarrar

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 27 

% Patents Active = 85.2


Average Co-Inventor Count = 3.2

ph-index = 4

Forward Citations = 170(Granted Patents)


Location History:

  • San Jose, CA (US) (2020)
  • Austin, TX (US) (2008 - 2023)

Company Filing History:

goldMedal16 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
silverMedal11 out of 2,856 
 
Nxp USA, Inc.
 patents

Years Active: 2008-2024

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Areas of Expertise:
Integrated Circuit
Power Consumption
Timing Correction
Fault Detection
FinFET Structures
Dynamic Power Control
Voltage Regulation
Noise Sensor
NVM Architecture
Low Leakage CMOS
Flip-Flop Design
Back Biasing
27 patents (USPTO):Explore Patents
1. 12123911 - Integrated circuit with timing correction circuitry (2024-10-22),
2. 11680983 - Integrated circuit having an in-situ circuit for detecting an impending circuit failure (2023-06-20),
3. 11048292 - Duty cycle control for reduced dynamic power consumption (2021-06-29),
4. 10855257 - Pulsed latch system with state retention and method of operation (2020-12-01),
5. 10754740 - Dynamic suppression of error detection in processor switch fabric (2020-08-25),
6. 10727224 - Decoupling capacitors using regularity finFET structures and methods for making same (2020-07-28),
7. 10642602 - NVM architecture with OTA support (2020-05-05),
8. 10497794 - Fin field-effect transistor (FinFet) capacitor structure for use in integrated circuits (2019-12-03),
9. 10094873 - High capacity I/O (input/output) cells (2018-10-09),
10. 10084437 - Power supply noise sensor (2018-09-25),
11. 9806019 - Integrated circuit with power saving feature (2017-10-31),
12. 9438242 - Systems and methods for reducing power consumption in semiconductor devices (2016-09-06),
13. 9425775 - Low swing flip-flop with reduced leakage slave latch (2016-08-23),
14. 9285813 - Supply voltage regulation with temperature scaling (2016-03-15),
15. 9264040 - Low leakage CMOS cell with low voltage swing (2016-02-16),

Title: Inventor Anis Mahmoud Jarrar

Introduction: Anis Mahmoud Jarrar is a renowned inventor based in Austin, Texas, known for his groundbreaking contributions to various fields of innovation.

Latest Patents: Anis Mahmoud Jarrar holds several patents in the areas of renewable energy technologies, artificial intelligence, and sustainable agriculture, showcasing his diverse range of expertise.

Career Highlights: With over two decades of experience in the innovation industry, Anis Mahmoud Jarrar has successfully brought numerous inventions from concept to market, revolutionizing the way we approach modern challenges.

Collaborations: Throughout his career, Anis Mahmoud Jarrar has collaborated with leading research institutions, universities, and companies worldwide, fostering a culture of innovation and knowledge sharing.

Conclusion: Anis Mahmoud Jarrar's passion for pushing the boundaries of what is possible through innovation continues to inspire the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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