The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Apr. 10, 2019
Nxp Usa, Inc., Austin, TX (US);
David Russell Tipple, San Jose, CA (US);
Mark Douglas Hall, San Jose, CA (US);
Anis Mahmoud Jarrar, San Jose, CA (US);
NXP USA, Inc., Austin, TX (US);
Abstract
A semiconductor apparatus includes a first device cell and a second device cell. The first device cell includes a first active region including a first set of device fins, an insulator layer disposed over the first set of device fins, a first gate fin over the first set of fins, and a first edge fin disposed over a first edge of the first active region. The second device cell is adjacent the first device cell and includes a second active region including a second set of device fins, the insulator layer disposed over the second set of device fins, a second gate fin over the second set of device fins, and a second edge fin disposed over a second edge of the second active region. The first edge fin and the second edge fin are connected to a power rail, a ground rail, or to each other to define a capacitor between the first device cell and the second device cell.