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For the Inventor, By the Inventor

Garching, Germany

Andreas Huber

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.1

ph-index = 3

Forward Citations = 34(Granted Patents)


Company Filing History:

goldMedal9 out of 300 
 
Siltronic Ag
 patents

Years Active: 2006-2012

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9 patents (USPTO):Explore Patents
1. 8216361 - Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it (2012-07-10),
2. 8088219 - Monocrystalline semiconductor wafer comprising defect-reduced regions and method for producing it (2012-01-03),
3. 7820549 - Layered semiconductor wafer with low warp and bow, and process for producing it (2010-10-26),
4. 7803695 - Semiconductor substrate and process for producing it (2010-09-28),
5. 7491966 - Semiconductor substrate and process for producing it (2009-02-17),
6. 7407891 - Method and apparatus for leveling a semiconductor wafer, and semiconductor wafer with improved flatness (2008-08-05),
7. 7387676 - Process for producing silicon semiconductor wafers with defined defect properties, and silicon semiconductor wafers having these defect properties (2008-06-17),
8. 7279700 - Semiconductor substrate and process for producing it (2007-10-09),
9. 7122865 - SOI wafer and process for producing it (2006-10-17),

Title: The Innovations of Andreas Huber

Introduction

Andreas Huber is a prominent inventor based in Garching, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on enhancing the quality and performance of monocrystalline semiconductor wafers.

Latest Patents

One of Huber's latest patents involves a monocrystalline semiconductor wafer comprising defect-reduced regions. These regions have a density of GOI-relevant defects within the range of 0/cm² to 0.1/cm² and occupy an areal proportion of 10% to 100% of the planar area of the semiconductor wafer. The remaining regions of the wafer exhibit a significantly higher defect density. The production method for these wafers includes annealing GOI relevant defects by irradiating defined regions of the wafer with a laser. Each location is treated with a power density of 1 GW/m² to 10 GW/m² for at least 25 ms. The laser emits radiation at a wavelength above the absorption edge of the wafer semiconductor material, ensuring that the temperature of the wafer rises by less than 20 K during irradiation.

Career Highlights

Andreas Huber is currently employed at Siltronic AG, a leading company in the semiconductor industry. His innovative work has positioned him as a key figure in advancing semiconductor technology.

Collaborations

Huber collaborates with notable colleagues, including Reinhold Wahlich and Ulrich Lambert. Their combined expertise contributes to the development of cutting-edge semiconductor solutions.

Conclusion

Andreas Huber's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in semiconductor manufacturing.

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