The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Nov. 07, 2005
Theresia Bauer, Burgkirchen, DE;
Robert Hoelzl, Postmuenster, DE;
Andreas Huber, Garching, DE;
Reinhold Wahlich, Tittmoning, DE;
Theresia Bauer, Burgkirchen, DE;
Robert Hoelzl, Postmuenster, DE;
Andreas Huber, Garching, DE;
Reinhold Wahlich, Tittmoning, DE;
Siltronic AG, Munich, DE;
Abstract
Semiconductor wafers are leveled by position-dependent measurement of a wafer-characterizing parameter to determine the position-dependent value of this parameter over an entire surface of the semiconductor wafer, etching the entire surface of the semiconductor wafer simultaneously under the action of an etching medium with simultaneous illumination of the entire surface, the material-removal etching rate dependent on the light intensity at the surface of the semiconductor wafer, the light intensity being established in a position-dependent manner such that the differences in the position-dependent values of the parameter measured in step a) are reduced by the position-dependent material-removal rate. Semiconductor wafers with improved flatness and nanotopography, and SOI wafers with improved layer thickness homogeneity are produced by this process.