The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2010

Filed:

Jan. 31, 2008
Applicants:

Markus Blietz, Tittmoning, DE;

Robert Hoelzl, Postmuenster, DE;

Reinhold Wahlich, Tittmoning, DE;

Andreas Huber, Garching, DE;

Inventors:

Markus Blietz, Tittmoning, DE;

Robert Hoelzl, Postmuenster, DE;

Reinhold Wahlich, Tittmoning, DE;

Andreas Huber, Garching, DE;

Assignee:

Siltronic AG, Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

Semiconductor wafers with a diameter of at least 200 mm comprise a silicon carrier wafer, an electrically insulating layer and a semiconductor layer located thereon, the semiconductor wafer having been produced by means of a layer transfer process comprising at least one RTA step, wherein the semiconductor wafer has a warp of less than 30 μm, a DeltaWarp of less than 30 μm, a bow of less than 10 μm and a DeltaBow of less than 10 μm. Processes for the production of a semiconductor wafer of this type require specific heat treatment regimens.


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