The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 2007

Filed:

Nov. 03, 2005
Applicants:

Dirk Dantz, Koenigslutter am Elm, DE;

Andreas Huber, Garching, DE;

Reinhold Wahlich, Tittmoning, DE;

Brian Murphy, Pfarrkirchen, DE;

Inventors:

Dirk Dantz, Koenigslutter am Elm, DE;

Andreas Huber, Garching, DE;

Reinhold Wahlich, Tittmoning, DE;

Brian Murphy, Pfarrkirchen, DE;

Assignee:

Siltronic AG, Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.


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