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For the Inventor, By the Inventor

Slingerlands, NY, United States of America

Alain E Kaloyeros

LinkedIn
USPTO Granted Patents = 21 

Average Co-Inventor Count = 2.2

ph-index = 13

Forward Citations = 1,002(Granted Patents)


Location History:

  • Voorheesville, NY (US) (1994 - 2000)
  • Slingerlands, NY (US) (1999 - 2024)

Company Filing History:

goldMedal14 out of 37 
 
Gelest, Inc.
 patents
silverMedal11 out of 1,991 
 
The State University of New York
 patents
bronzeMedal1 out of 1 
 
Research Foundation of Suny - New York
 patent
4. 1 out of 29 
 
Gelest Technologies, Inc.
 patents
5. 1 out of 1 
 
Kalark Nanostructure Sciences Inc.
 patent
where one patent can have more than one assignee

Years Active: 1994-2025

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21 patents (USPTO):Explore Patents
1. 12398469 - Methods and systems for producing conformal thin films (2025-08-26),
2. 12378666 - Silicon carbide thin films and vapor deposition methods thereof (2025-08-05),
3. 12344934 - Silicon-based thin films from N-alkyl substituted perhydridocyclotrisilazanes (2025-07-01),
4. 12065737 - Silicon-based thin films from N-alkyl substituted perhydridocyclotrisilazanes (2024-08-20),
5. 11987882 - Silicon carbide thin films and vapor deposition methods thereof (2024-05-21),
6. 11634811 - Process for thin film deposition through controlled formation of vapor phase transient species (2023-04-25),
7. 11248291 - Process for thin film deposition through controlled formation of vapor phase transient species (2022-02-15),
8. 10961624 - Process for pulsed thin film deposition (2021-03-30),
9. 6884466 - Process for low-temperature metal-organic chemical vapor deposition of tungsten nitride and tungsten nitride films (2005-04-26),
10. 6586056 - Silicon based films formed from iodosilane precursors and method of making the same (2003-07-01),
11. 6534133 - Methodology for in-situ doping of aluminum coatings (2003-03-18),
12. 6346477 - Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt (2002-02-12),
13. 6139922 - Tantalum and tantalum-based films formed using fluorine-containing (2000-10-31),
14. 6099903 - MOCVD processes using precursors based on organometalloid ligands (2000-08-08),
15. 6090709 - Methods for chemical vapor deposition and preparation of conformal (2000-07-18),

Title: Alain E Kaloyeros: A Pioneer in Nanotechnology

Introduction: Alain E Kaloyeros is a renowned inventor and scientist known for his groundbreaking work in the field of nanotechnology. Born in Slingerlands, NY, he has made significant contributions to the advancement of technology through his innovative research and inventions.

Latest Patents: Alain E Kaloyeros holds several patents in the field of nanotechnology, focusing on materials science, semiconductor technology, and advanced manufacturing processes. His patents have revolutionized the industry and paved the way for new developments in various sectors.

Career Highlights: With a distinguished career spanning several decades, Alain E Kaloyeros has held key positions in leading research institutions and universities. He has been instrumental in establishing cutting-edge research facilities and fostering collaborations between academia, industry, and government agencies.

Collaborations: Throughout his career, Alain E Kaloyeros has collaborated with top scientists, engineers, and industry experts to drive innovation and solve complex technological challenges. His collaborative efforts have led to the development of revolutionary technologies with far-reaching impacts.

Conclusion: Alain E Kaloyeros's passion for innovation and relentless pursuit of scientific excellence have solidified his reputation as a pioneer in nanotechnology. His work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible in the world of technology.

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