The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 26, 2025

Filed:

Nov. 22, 2024
Applicant:

Kalark Nanostructure Sciences Inc., Doylestown, PA (US);

Inventors:

Alain E. Kaloyeros, Slingerlands, NY (US);

Barry C. Arkles, Pipersville, PA (US);

Assignee:

KALARK NANOSTRUCTURE SCIENCES INC., Doylestown, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 28/02 (2006.01); C23C 14/34 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
C23C 28/02 (2013.01); C23C 14/3407 (2013.01); C23C 16/45525 (2013.01);
Abstract

Thin film deposition procedures and systems are provided that consist of hybrid growth processes or integrated physical-chemical deposition processes that combine and unite the advantages of physical (i.e., sputtering) and chemical (i.e., CVD, ALD, MLD, SAM, and/or Click) deposition processes, while minimizing or eliminating their individual shortcomings and challenges. These methods and techniques therefore provide a common and shared processing platform that employs both chemical and physical reactions simultaneously or sequentially to grow high quality conformal thin films with programmable composition and controlled properties.


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