The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2002
Filed:
Jan. 09, 2001
Applicant:
Inventors:
Alain E. Kaloyeros, Slingerlands, NY (US);
Ana Londergan, Campbell, CA (US);
Barry Arkles, Dresher, PA (US);
Assignee:
Research Foundation of SUNY - New York, Albany, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
A process for the preparation of cobalt disilicide films comprises chemical vapor deposition (CVD) of cobalt from cobalt tricarbonyl nitrosyl as cobalt source precursor, capping the cobalt layer and annealing to form epitaxial cobalt disilicide on the silicon substrate.
Kaloyeros, Alain. (2002). Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt (U.S. Patent No. 6346477). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6346477
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile