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Boise, ID, United States of America

Aftab A Ahmad

USPTO Granted Patents = 55 (Patent Applications = 6)

Average Co-Inventor Count = 2.3

ph-index = 15

Forward Citations = 1,063(Granted Patents)

Forward Citations (Not Self Cited) = 1,041(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Lake Oswego, OR (US) (2004)
Colorado Springs, CO (US) (2001 - 2005)
Boise, ID (US) (1991 - 2007)

Company Filing History:

49 out of 38,119

Micron Technology Incorporated

Micron Semiconductor, Inc.

Lsi Logic Corporation

Years Active: 1991-2007

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Areas of Expertise:

Shallow Trench Isolation

Low Dielectric Constant Insulator

Nitrogen Implantation

Gate Dielectric Integrity

Graded LDD Implant Process

Field Effect Transistors

Semiconductor Transistor Devices

CMOS Circuitry

Metal-to-Metal Capacitor

Sub-Atmospheric Ozone Oxidation

Split-Polysilicon CMOS Process

Wafer Level Testing

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7176549 - Shallow trench isolation using low dielectric constant insulator (2007-02-13),

2. 7071067 - Fabrication of integrated devices using nitrogen implantation (2006-07-04),

3. 6930363 - Barrier in gate stack for improved gate dielectric integrity (2005-08-16),

4. 6858507 - Graded LDD implant process for sub-half-micron MOS devices (2005-02-22),

5. 6831347 - Shallow trench isolation using low dielectric constant insulator (2004-12-14),

6. 6809395 - Isolation structure having trench structures formed on both side of a locos (2004-10-26),

7. 6770571 - Barrier in gate stack for improved gate dielectric integrity (2004-08-03),

8. 6743979 - Bonding pad isolation (2004-06-01),

9. 6664600 - Graded LDD implant process for sub-half-micron MOS devices (2003-12-16),

10. 6660600 - Methods of forming integrated circuitry, methods of forming elevated source/drain regions of a field effect transistor, and methods of forming field effect transistors (2003-12-09),

11. 6552394 - Semiconductor transistor devices and structures with halo regions (2003-04-22),

12. 6495885 - Graded LDD implant process for sub-half-micron MOS devices (2002-12-17),

13. 6448141 - Graded LDD implant process for sub-half-micron MOS devices (2002-09-10),

14. 6444529 - Methods of forming integrated circuitry and methods of forming elevated source/drain regions of a field effect transistor (2002-09-03),

15. 6373114 - Barrier in gate stack for improved gate dielectric integrity (2002-04-16),

Title: The Innovative Journey of Aftab A Ahmad

Introduction: Aftab A Ahmad, a talented inventor based in Boise, ID (US), has made significant contributions to the field of innovations with his creative mindset and dedication to problem-solving.

Latest Patents: Aftab A Ahmad holds several patents in various industries, showcasing his versatility and ingenuity in inventing new solutions to complex challenges.

Career Highlights: Throughout his career, Aftab A Ahmad has demonstrated a keen ability to identify gaps in the market and develop groundbreaking inventions that have the potential to impact numerous sectors positively.

Collaborations: Aftab A Ahmad has collaborated with leading research institutions, universities, and companies to further enhance his inventions and bring them to the market, highlighting his commitment to innovation and progress.

Conclusion: Aftab A Ahmad's passion for innovation, coupled with his relentless drive to push boundaries, has established him as a prominent figure in the world of inventors, with a promising future ahead in shaping the landscape of technological advancements.

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