Aftab A Ahmad

This inventor holds 55 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L). Top assignees: Micron Technology Incorporated, Micron Semiconductor, Inc., Lsi Logic Corporation. Active years: 1991-2007.

USPTO Granted Patents = 55 (Patent Applications = 6)

% Patents Active = 94.5

Average Co-Inventor Count = 2.3

ph-index = 15

Forward Citations = 1,064(Granted Patents)

Forward Citations (Not Self Cited) = 1,041(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Lake Oswego, OR (US) (2004)
Colorado Springs, CO (US) (2001 - 2005)
Boise, ID (US) (1991 - 2007)

Company Filing History:

49 out of 39,149

Micron Technology Incorporated

patents

4 out of 156

Micron Semiconductor, Inc.

patents

2 out of 3,715

Lsi Logic Corporation

patents

Years Active: 1991-2007

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Areas of Expertise:

Shallow Trench Isolation

Gate Dielectric Integrity

LDD Implant Process

MOS Devices

Field Effect Transistor

Integrated Circuitry

Nitrogen Implantation

Halo Regions

CMOS Circuitry

Bonding Pad Isolation

Resistor Formation

Thin Oxidation Process

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7176549 - Shallow trench isolation using low dielectric constant insulator (2007-02-13),

2. 7071067 - Fabrication of integrated devices using nitrogen implantation (2006-07-04),

3. 6930363 - Barrier in gate stack for improved gate dielectric integrity (2005-08-16),

4. 6858507 - Graded LDD implant process for sub-half-micron MOS devices (2005-02-22),

5. 6831347 - Shallow trench isolation using low dielectric constant insulator (2004-12-14),

6. 6809395 - Isolation structure having trench structures formed on both side of a locos (2004-10-26),

7. 6770571 - Barrier in gate stack for improved gate dielectric integrity (2004-08-03),

8. 6743979 - Bonding pad isolation (2004-06-01),

9. 6664600 - Graded LDD implant process for sub-half-micron MOS devices (2003-12-16),

10. 6660600 - Methods of forming integrated circuitry, methods of forming elevated source/drain regions of a field effect transistor, and methods of forming field effect transistors (2003-12-09),

11. 6552394 - Semiconductor transistor devices and structures with halo regions (2003-04-22),

12. 6495885 - Graded LDD implant process for sub-half-micron MOS devices (2002-12-17),

13. 6448141 - Graded LDD implant process for sub-half-micron MOS devices (2002-09-10),

14. 6444529 - Methods of forming integrated circuitry and methods of forming elevated source/drain regions of a field effect transistor (2002-09-03),

15. 6373114 - Barrier in gate stack for improved gate dielectric integrity (2002-04-16),

Title: The Innovative Journey of Aftab A Ahmad

Introduction: Aftab A Ahmad, a talented inventor based in Boise, ID (US), has made significant contributions to the field of innovations with his creative mindset and dedication to problem-solving.

Latest Patents: Aftab A Ahmad holds several patents in various industries, showcasing his versatility and ingenuity in inventing new solutions to complex challenges.

Career Highlights: Throughout his career, Aftab A Ahmad has demonstrated a keen ability to identify gaps in the market and develop groundbreaking inventions that have the potential to impact numerous sectors positively.

Collaborations: Aftab A Ahmad has collaborated with leading research institutions, universities, and companies to further enhance his inventions and bring them to the market, highlighting his commitment to innovation and progress.

Conclusion: Aftab A Ahmad's passion for innovation, coupled with his relentless drive to push boundaries, has established him as a prominent figure in the world of inventors, with a promising future ahead in shaping the landscape of technological advancements.