The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Nov. 29, 2001
Aftab Ahmad, Boise, ID (US);
David J. Keller, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention encompasses a transistor device comprising a region of a semiconductor material, and a transistor gate over a portion of the region. The device comprises a pair of opposing sidewall spacers adjacent sidewalls of the transistor gate and a pair of opposing first conductivity type source/drain regions within the semiconductor material proximate the transistor gate. The entirety of the semiconductor material under one of the sidewall spacers being defined as a first segment, and the entirety of the semiconductor material which is under the other of the sidewall spacers being defined as a second segment. The first and second segments of the semiconductor material are separated from the first and second source/drain regions by first and second gap regions, respectively, of the semiconductor material. The device further comprises a pair of opposing second conductivity type halo regions within the first and second gap regions.