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Yokohama, Japan

Sumitomo Electric Device Innovations, Inc.

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USPTO Granted Patents = 352

% Expired Patents = 3.7

EPO Patents = 17

Forward Citations = 335

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222 inventors (with patents filed for the assignee):

Hirokazu Tanaka (15 out of 45 patents)

Masahiro Nishi (14 out of 20 patents)

Tsutomu Komatani (13 out of 13 patents)

4. Masahiro Hirayama (11 out of 11 patents)

5. Masao Shibata (11 out of 11 patents)

6. Mitsuyoshi Miyata (11 out of 11 patents)

7. Ryota Teranishi (10 out of 10 patents)

8. Yoshihiro Yoneda (10 out of 48 patents)

9. Toshiyuki Kosaka (9 out of 9 patents)

10. Naoyuki Miyazawa (9 out of 9 patents)

11. Hajime Matsuda (9 out of 14 patents)

12. Ken Nakata (8 out of 32 patents)

13. Takuya Okimoto (8 out of 12 patents)

14. Shingo Inoue (8 out of 9 patents)

15. Takuma Nakano (7 out of 7 patents)

Core Competencies:

Epitaxial Substrate

HEMT Device

Transistors

Microwave Integrated Circuit

Optical Transceiver

Amplification Device

Capacitor

Optical Module

Wireless Communication

Doherty Amplifier

Optical Semiconductor

High Frequency Amplifier

352 patents: Sort by Forward Citations

1. 12777693 - Semiconductor device and method for manufacturing the same (2026-10-27),

2. 12772465 - Capacitor and method of manufacturing same (2026-10-20),

3. 12771298 - Doherty amplifier (2026-10-20),

4. 12745649 - Semiconductor device and wafer (2026-09-22),

5. 12740392 - Semiconductor device preventing insulating layer peeling and method of manufacturing semiconductor device (2026-09-15),

6. 12740345 - Method of manufacturing semiconductor device (2026-09-15),

7. 12724214 - Optical transceiver with two rows of contact pads on both surfaces of the electrical connector (2026-09-01),

8. 12700716 - Optical transmitter (2026-08-04),

9. 12696767 - Semiconductor device (2026-07-28),

10. 12696380 - Matching circuit board and semiconductor device (2026-07-28),

11. 12648489 - Output matching network to reduce self and mutual inductances of output inductive components in a cavity package (2026-06-02),

12. 12642088 - Semiconductor device (2026-05-26),

13. 12606933 - Method for manufacturing epitaxial substrate by irradiating a surface of a group iii nitride semiconductor layer with ultraviolet light in an atmosphere containing oxygen (2026-04-21),

14. 12593502 - Interconnected array transistors including source and drain bus bars and fingers (2026-03-31),

15. 12593490 - HEMT device with crystallinity control film (2026-03-31),

Company Overview

Sumitomo Electric Device Innovations, Inc., based in Yokohama, Japan, specializes in the development and manufacturing of advanced semiconductor devices. The company focuses on key technology areas such as epitaxial substrates, high electron mobility transistors (HEMT), and microwave integrated circuits. Their expertise extends to optical transceivers, amplification devices, capacitors, and optical modules, positioning them as a significant player in the semiconductor industry, particularly in high-performance applications.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 27 2026

352 Patents

#11 in Yokohama

#481 in Japan

#2,600 in the World

Yokohama, Japan

Sumitomo Electric Device Innovations, Inc.

Forward Citations = 335

222 inventors:

Hirokazu Tanaka (15 out of 45 patents)

Masahiro Nishi (14 out of 20 patents)

Tsutomu Komatani (13 out of 13 patents)

4. Masahiro Hirayama (11 out of 11 patents)

5. Masao Shibata (11 out of 11 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Sumitomo Electric Device Innovations, Inc.. Retrieved from https://idiyas.com/company/sumitomo-electric-device-innovations

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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