The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 27, 2026

Filed:

Jul. 26, 2023
Applicant:

Sumitomo Electric Device Innovations, Inc., Yokohama, JP;

Inventor:

Takuma Nakano, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 10/20 (2026.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/832 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H10D 62/8325 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 62/8503 (2025.01);
Abstract

A semiconductor device includes a silicon carbide substrate, a nitride semiconductor layer provided on a top surface of the silicon carbide substrate, a transistor provided on the nitride semiconductor layer, and an element provided on or above the silicon carbide substrate, wherein the silicon carbide substrate has a hole that is provided between the transistor and the element, the hole is formed by removing at least a part of the silicon carbide substrate from a bottom surface of the silicon carbide substrate and an internal thermal conductivity of the hole is smaller than a thermal conductivity of the silicon carbide substrate.


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Nakano, Takuma. (2026). Semiconductor device and method for manufacturing the same (U.S. Patent No. 12777693). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12777693

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