The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 15, 2026

Filed:

Dec. 18, 2023
Applicant:

Sumitomo Electric Device Innovations, Inc., Kanagawa, JP;

Inventor:

Kenichi Watanabe, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01); H10P 50/26 (2026.01); H10P 50/66 (2026.01); H10W 74/01 (2026.01); H10W 74/10 (2026.01);
U.S. Cl.
CPC ...
H10W 20/40 (2026.01); H10P 50/266 (2026.01); H10P 50/667 (2026.01); H10W 74/01 (2026.01); H10W 74/147 (2026.01);
Abstract

A semiconductor device includes a substrate; a first insulating layer provided on the substrate; a first metal layer provided on the first insulating layer; a second metal layer provided on the first metal layer; and a second insulating layer covering the first metal layer and the second metal layer. An upper surface of the first metal layer has a first region that is in contact with the second metal layer, and a second region that is separated from the second metal layer. The second insulating layer is in direct contact with a side surface and the second region of the first metal layer and an upper surface and a side surface of the second metal layer. A width of the first metal layer is greater than or equal to a width of the second metal layer in a direction parallel to the substrate.


Find Patent Forward Citations

Loading…