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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12606933 B1

PDFFull Text
Date of Patent:
Apr. 21, 2026

Filed:

Nov. 04, 2020

Method for manufacturing epitaxial substrate by irradiating a surface of a group iii nitride semiconductor layer with ultraviolet light in an atmosphere containing oxygen

Applicants:

Sumitomo Electric Device Innovations, Inc., Yokohama, JP;

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Kohei Miyashita, Yokohama, JP;

Takeshi Kishi, Yokohama, JP;

Takumi Yonemura, Osaka, JP;

Assignees:

Sumitomo Electric Device Innovations, Inc., Yokohama, JP;

Sumitomo Electric Industries, Ltd., Osaka, JP;

Attorney:

Volpe Koenig

Primary Examiner:

Kenneth A Bratland, Jr

Int. Cl.
CPC ...
C30B 33/00 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H10D 62/85 (2025.01); H10P 14/20 (2026.01); H10P 74/20 (2026.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 25/02 (2013.01); C30B 29/403 (2013.01); C30B 33/00 (2013.01); H10D 62/8503 (2025.01); H10P 14/20 (2026.01); H10P 14/2904 (2026.01); H10P 14/3248 (2026.01); H10P 14/3434 (2026.01); H10P 74/207 (2026.01); H10D 30/475 (2025.01); H10P 14/3416 (2026.01); H10P 14/38 (2026.01);
Abstract

A method for manufacturing an epitaxial substrate includes the steps of: epitaxially growing a group III nitride semiconductor layer on a substrate; removing the substrate from a growth furnace; irradiating a surface of the group III nitride semiconductor layer with ultraviolet light while exposing the surface to an atmosphere containing oxygen; and measuring a sheet resistance value of the group III nitride semiconductor layer.

Find Patent Forward Citations

Miyashita, Kohei. (2026). Method for manufacturing epitaxial substrate by irradiating a surface of a group iii nitride semiconductor layer with ultraviolet light in an atmosphere containing oxygen (U.S. Patent No. 12606933). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12606933

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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