The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2026
Filed:
Nov. 04, 2020
Applicants:
Sumitomo Electric Device Innovations, Inc., Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Inventors:
Assignees:
Sumitomo Electric Device Innovations, Inc., Yokohama, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/00 (2006.01); C30B 25/02 (2006.01); C30B 29/40 (2006.01); H10D 62/85 (2025.01); H10P 14/20 (2026.01); H10P 74/20 (2026.01); H10D 30/47 (2025.01);
U.S. Cl.
CPC ...
C30B 29/406 (2013.01); C30B 25/02 (2013.01); C30B 29/403 (2013.01); C30B 33/00 (2013.01); H10D 62/8503 (2025.01); H10P 14/20 (2026.01); H10P 14/2904 (2026.01); H10P 14/3248 (2026.01); H10P 14/3434 (2026.01); H10P 74/207 (2026.01); H10D 30/475 (2025.01); H10P 14/3416 (2026.01); H10P 14/38 (2026.01);
Abstract
A method for manufacturing an epitaxial substrate includes the steps of: epitaxially growing a group III nitride semiconductor layer on a substrate; removing the substrate from a growth furnace; irradiating a surface of the group III nitride semiconductor layer with ultraviolet light while exposing the surface to an atmosphere containing oxygen; and measuring a sheet resistance value of the group III nitride semiconductor layer.