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Saint-Égrève, France

E2v Semiconductors

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USPTO Granted Patents = 45

% Expired Patents = 64.4

CIPO Patents = 6

EPO Patents = 27

Forward Citations = 108

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42 inventors (with patents filed for the assignee):

Frédéric Mayer (11 out of 30 patents)

Thierry Ligozat (6 out of 12 patents)

Pierre Fereyre (5 out of 10 patents)

4. Richard Morisson (4 out of 7 patents)

5. Bruno Diasparra (3 out of 9 patents)

6. Henri Bugnet (3 out of 3 patents)

7. François Bore (3 out of 4 patents)

8. Sandrine Bruel (3 out of 3 patents)

9. Jean-Alain Nicolas (2 out of 7 patents)

10. Florian Julien (2 out of 4 patents)

11. Michel Ayraud (2 out of 12 patents)

12. Stéphane Gesset (2 out of 2 patents)

13. Marie Guillon (2 out of 2 patents)

14. Marc Wingender (2 out of 8 patents)

15. Pierre Blanchard (2 out of 24 patents)

Core Competencies:

Image Sensor

Dynamic Range

Analog-Digital Converter

Pixel Design

Charge Transfer

Depth Information

High-Speed Conversion

Optical Crosstalk

Interconnects

Microstructures

Differential Voltage

Digital Summation

45 patents: Sort by Forward Citations

1. 9967490 - Time delay integration image sensor with detection of travelling errors (2018-05-08),

2. 9961289 - Image sensor with control signal sequence generation (2018-05-01),

3. 9924118 - Silicon-based image sensor with improved reading dynamic range (2018-03-20),

4. 9736414 - Ramp-type analogue-digital conversion, with multiple conversions or single conversion, depending on the light level received by a pixel (2017-08-15),

5. 9699442 - Method for producing images with depth information and image sensor (2017-07-04),

6. 9571761 - Image-sensing method having a very short integration time (2017-02-14),

7. 9531974 - Two-line, shared pixel linear image sensor (2016-12-27),

8. 9253426 - Moving image sensor having multiphase digital summation and charge storage nodes separated from photodiodes by charge transfer gates (2016-02-02),

9. 9185319 - Pixel-grouping image sensor (2015-11-10),

10. 9093353 - Matrix image sensor providing bidirectional charge transfer with asymmetric gates (2015-07-28),

11. 9041577 - Digital-to-analogue converter (2015-05-26),

12. 9040890 - Electron-multiplication image sensor (2015-05-26),

13. 8982262 - Image sensor having a sampler array (2015-03-17),

14. 8933495 - Charge-integration multilinear image sensor (2015-01-13),

15. 8816406 - Matrix charge-transfer image sensor with asymmetric gate (2014-08-26),

Company Overview

E2v Semiconductors, based in Saint-Égrève, France, specializes in advanced imaging technologies and semiconductor solutions. The company focuses on the development and manufacturing of high-performance image sensors and analog-digital converters, catering to various applications including dental radiology and high dynamic range imaging. E2v's expertise extends to silicon-based sensors, charge integration, and electron multiplication, positioning it as a key player in the semiconductor industry with a commitment to innovation and quality.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 3 2026

45 Patents

#1 in Saint-Égrève

#519 in France

#15,457 in the World

Saint-Égrève, France

E2v Semiconductors

Forward Citations = 108

42 inventors:

Frédéric Mayer (11 out of 30 patents)

Thierry Ligozat (6 out of 12 patents)

Pierre Fereyre (5 out of 10 patents)

4. Richard Morisson (4 out of 7 patents)

5. Bruno Diasparra (3 out of 9 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: E2v Semiconductors. Retrieved from https://idiyas.com/company/e2v-semiconductors

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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