The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 13, 2015

Filed:

Jan. 26, 2012
Applicant:

Frederic Mayer, Voiron, FR;

Inventor:

Frederic Mayer, Voiron, FR;

Assignee:

E2V Semiconductors, Saint-Égrève, FR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/148 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14856 (2013.01);
Abstract

The invention relates to time-delay and signal-integration linear image sensors (or TDI sensors). According to the invention, a pixel comprises a succession of several insulated gates covering a semiconducting layer, the gates of one pixel being separated from one another and separated from the gates of an adjacent pixel of another line by narrow uncovered gaps of a gate and comprising a doped region of a second type of conductivity covered by a doped superficial region of the first type; the superficial regions are kept at one and the same reference potential; the width of the narrow gaps between adjacent gates is such that the internal potential of the region of the second type is modified in the whole width of the narrow gap when a gate sustains the alternations of potential necessary for the transfer of charges from one pixel to the following one.


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