The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2015
Filed:
Jul. 25, 2012
Frédéric Mayer, Voiron, FR;
Marie Guillon, Grenoble, FR;
Frédéric Mayer, Voiron, FR;
Marie Guillon, Grenoble, FR;
E2V SEMICONDUCTORS, Saint-Égrève, FR;
Abstract
The invention relates to matrix image sensors organized into pixel rows and columns, and more specifically to image sensors produced with active pixels in MOS technology. The matrix is organized into groups of at least two pixels with means for grouping the charges engendered in the two pixels into one pixel, with the aim of improving sensitivity. Provision is made for at least one gate for temporarily storing charges, of dissymmetric form, arranged between the photodiode of the first pixel and the photodiode of the second pixel, and means for applying to the temporary storage gate a succession of potentials that allow prohibition first of all of the passage of charges between the first and second photodiodes during the charge integration period, then collection, under the gate, of the charges accumulated in the photodiodes, then discharge of these charges only into the second photodiode, on account of the dissymmetry of the gate. The charges grouped in this way in a single photodiode are read in the pixel.