The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Oct. 18, 2012
E2v Semiconductors, Saint-Égrève, FR;
Frédéric Mayer, Voiron, FR;
Henri Bugnet, Moirans, FR;
E2V SEMICONDUCTORS, Saint-Égréve, FR;
Abstract
The invention relates to time-delay and charge integration image sensors employing active CMOS technology pixels. The sensor comprises N rows of pixels and each pixel of generally square shaped comprises two (though possibly also three or four) photodiodes and charge storage nodes, having means for transferring charges from each photodiode to one or other of the storage nodes. Control of transfer from the photodiodes to one then the other of the storage nodes is carried out in such a way that one storage node receives in succession, during two successive phases of a periodic cycle, the charges from two photodiodes that have seen the same image portion during the two phases. The charges received by one of the storage nodes during the first phase is added to the charges received by the other storage node in the following phase.