The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 20, 2018
Filed:
Oct. 30, 2014
Applicant:
E2v Semiconductors, Saint Egreve, FR;
Inventor:
Stéphane Gesset, Saint-Laurent-du-Pont, FR;
Assignee:
E2V SEMICONDUCTORS, Saint Egreve, FR;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/355 (2011.01); H04N 5/243 (2006.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H04N 5/3559 (2013.01); H04N 5/243 (2013.01); H04N 5/355 (2013.01); H04N 5/378 (2013.01); H04N 5/3745 (2013.01);
Abstract
In an image sensor, the effective capacitance of the storage node NS of the pixel, which stores the charges (the electrons) collected by the photosensitive element of the pixel, is modified with the aid of a feedback loopwhich influences the supply Vof the follower transistor Tconnected to the storage node, in such a way that the apparent capacitance of the storage node depends on the gain Gof the loop. By modifying the gain, the capacitance of the storage node and therefore the charge/voltage conversion factor, which is inversely proportional to this capacitance, is modified.