The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
May. 05, 2011
Frederic Mayer, Saint Egreve, FR;
Ray Bell, Middx, GB;
Frederic Mayer, Saint Egreve, FR;
Ray Bell, Middx, GB;
E2V Semiconductors, Saint- Égrève, FR;
Abstract
The invention relates to image sensors, more particularly but not exclusively to scanning sensors with signal integration (or TDI sensors, for 'Time Delay Integration linear sensors'). The adjacent pixels along a column each comprise an alternation of at least one photodiode and one storage gate adjacent to the photodiode. The gates comprise a main body and, on the upstream side in the direction of the transfer of the charges but not on the downstream side, a series of narrow fingers extending from the main body toward the upstream side, the ends of the fingers on the upstream side being adjacent to a photodiode situated upstream of the gate, the narrow fingers being separated from one another by doped isolating regions of the first type of conductivity, with a higher doping and preferably deeper than the surface regions, connected, as they are, to the reference potential of the active layer, these isolating regions being interposed between the main body of the gate and the photodiode. These fingers induce a directionality on the charge transfer.