For the Inventor, By the Inventor

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Shenzhen, China

Byd Semiconductor Company Limited

USPTO Granted Patents = 3

EPO Patents = 2

Forward Citations = 0

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6 inventors (with patents filed for the assignee):

Wenqing Wang (1 out of 4 patents)

Wei Zhang (1 out of 124 patents)

Jing Liu (1 out of 181 patents)

4. Baowei Huang (1 out of 4 patents)

5. Haiping Wu (1 out of 2 patents)

6. Xiuguang Xiao (1 out of 1 patent)

7. Yun Yang (35 patents)

8. Linxia Fang (1 patent)

9. Yin Chen (2 patents)

10. Xiaohua Yang (8 patents)

11. Zibao Zhang (2 patents)

12. Jie Zhang (95 patents)

3 patents: Sort by Forward Citations

1. 12446243 - Semiconductor cell structure, IGBT cell structure, semiconductor structure, and method for manufacturing IGBT cell structure (2025-10-14),

2. 12278476 - Under voltage protection circuit and device (2025-04-14),

3. 12080806 - Fast recovery diode and manufacturing method thereof (2024-09-03),

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USPTO Data Jan 1 1976 - Dec 23 2025

3 Patents

#1,174 in Shenzhen

#7,230 in China

Shenzhen, China

Byd Semiconductor Company Limited

Forward Citations = 0

6 inventors:

Wenqing Wang (1 out of 4 patents)

Wei Zhang (1 out of 124 patents)

Jing Liu (1 out of 181 patents)

4. Baowei Huang (1 out of 4 patents)

5. Haiping Wu (1 out of 2 patents)

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