Company Filing History:
Years Active: 2024
Title: Innovations of Xiuguang Xiao in Semiconductor Technology
Introduction
Xiuguang Xiao is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique fast recovery diode, which is essential for various electronic applications.
Latest Patents
Xiuguang Xiao holds a patent for a fast recovery diode and its manufacturing method. This diode features a cell region, a main junction region surrounding the cell region, and a termination region encircling the main junction region. Notably, the main junction doping region has a doping concentration that is lower than that of the active region in the cell region. Additionally, the doping concentration of the main junction doping region gradually decreases from the inside to the outside, enhancing the diode's performance.
Career Highlights
Xiuguang Xiao is currently employed at Byd Semiconductor Company Limited, where he continues to innovate in the semiconductor sector. His work has been instrumental in advancing the technology used in fast recovery diodes, which are crucial for improving the efficiency of electronic devices.
Collaborations
Xiuguang has collaborated with various professionals in his field, including his coworker Wei Zhang. Their combined expertise has contributed to the successful development of advanced semiconductor technologies.
Conclusion
In summary, Xiuguang Xiao is a notable inventor whose work in semiconductor technology, particularly in fast recovery diodes, has made a significant impact. His contributions continue to shape the future of electronic devices.