The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 03, 2024
Filed:
Nov. 15, 2019
Applicant:
Byd Semiconductor Company Limited, Shenzhen, CN;
Inventors:
Xiuguang Xiao, Shenzhen, CN;
Wei Zhang, Shenzhen, CN;
Assignee:
BYD SEMICONDUCTOR COMPANY LIMITED, Shenzhen, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8611 (2013.01); H01L 29/66136 (2013.01);
Abstract
A fast recovery diode includes a cell region, a main junction region arranged around the cell region, and a termination region arranged around the main junction region. A main junction doping region in the main junction region has a doping concentration lower than that of an active region in the cell region. The doping concentration of the main junction doping region gradually decreases along a direction from inside to outside.