Semiconductor cell structure, igbt cell structure, semiconductor structure, and method for manufacturing igbt cell structure

Abstract

An insulated gate bipolar transistor (IGBT) cell structure includes an N-type drift layer, an N-type termination layer, a P-type collector layer, and a collector metal layer stacked in sequence. On a side of the N-type drift layer away from the P-type collector layer and in the N-type drift layer, the IGBT cell structure includes: two first trenches spaced apart from each other, a trench-shaped insulating oxide layer formed on an inner wall of each of the first trenches, a polysilicon electrode located in the trench-shaped insulating oxide layer, a second trench formed on the inner wall of the first trench, a trench-shaped gate oxide layer located in the second trench, a polysilicon gate located in the trench-shaped gate oxide layer, a P well region located between the first trenches, and two floating P regions spaced apart from each other.