Haiping Wu

Title: Haiping Wu: Innovator in Semiconductor Technology

Introduction

Haiping Wu is a prominent inventor based in Shenzhen, China. He has made significant contributions to the field of semiconductor technology, particularly in the development of insulated gate bipolar transistors (IGBTs). With a total of two patents to his name, Wu's work has had a notable impact on the industry.

Latest Patents

Wu's latest patents include advancements in semiconductor cell structures and IGBT cell structures. One of his notable inventions is an insulated gate bipolar transistor (IGBT) cell structure that features an N-type drift layer, an N-type termination layer, a P-type collector layer, and a collector metal layer stacked in sequence. This innovative design includes two first trenches spaced apart, a trench-shaped insulating oxide layer, a polysilicon electrode, a second trench, a trench-shaped gate oxide layer, a polysilicon gate, a P well region, and two floating P regions. These advancements enhance the efficiency and performance of semiconductor devices.

Career Highlights

Throughout his career, Haiping Wu has worked with notable companies such as Byd Semiconductor Company Limited and Shenzhen Byd Auto R&D Company Limited. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge technology in the semiconductor sector.

Collaborations

Wu has collaborated with several professionals in his field, including Baowei Huang and Linglong Wang. These partnerships have fostered innovation and have been instrumental in the development of his patented technologies.

Conclusion

Haiping Wu is a distinguished inventor whose work in semiconductor technology continues to influence the industry. His patents reflect a commitment to innovation and excellence in engineering. Wu's contributions are paving the way for future advancements in semiconductor applications.