Byd Semiconductor Company Limited

Byd Company Limited

Shenzhen Byd Auto R&d Company Limited

Haiping Wu

Yanfei Zhou

Baowei Huang

Chenwei Leng

Yining Song

Rui Gao

Linglong Wang

An insulated gate bipolar transistor (IGBT) cell structure includes an N-type drift layer, an N-type termination layer, a P-type collector layer, and a collector metal layer stacked in sequence. On a side of the N-type drift layer away from the P-type collector layer and in the N-type drift layer, the IGBT cell structure includes: two first trenches spaced apart from each other, a trench-shaped insulating oxide layer formed on an inner wall of each of the first trenches, a polysilicon electrode located in the trench-shaped insulating oxide layer, a second trench formed on the inner wall of the first trench, a trench-shaped gate oxide layer located in the second trench, a polysilicon gate located in the trench-shaped gate oxide layer, a P well region located between the first trenches, and two floating P regions spaced apart from each other.

Semiconductor cell structure, IGBT cell structure, semiconductor structure, and method for manufacturing IGBT cell structure

Electric air pump

Growing community of inventors

Shenzhen, China

Haiping Wu