logo

For the Inventor, By the Inventor

Herzogenrath, Germany

Aixtron Ag


USPTO Granted Patents = 39

% Expired Patents = 61.5


Trademarks = 6

Forward Citations = 737

Loading Chart...
Loading Chart...

41 inventors (with patents filed for the assignee):

goldMedal Gerhard Karl Strauch (11 out of 15 patents)

silverMedal Johannes Kaeppeler (10 out of 10 patents)

bronzeMedal Holger Jürgensen (8 out of 8 patents)

4.  Gerd Strauch (7 out of 7 patents)

5.  Johannes Käppeler (6 out of 12 patents)

6.  Martin Dauelsberg (5 out of 11 patents)

7.  Holger Jurgensen (5 out of 14 patents)

8.  Michael Heuken (4 out of 7 patents)

9.  Holger Jürgensen (3 out of 3 patents)

10.  Armin Dadgar (2 out of 15 patents)

11.  Alois Krost (2 out of 9 patents)

12.  Piotr Strzyzewski (2 out of 3 patents)

13.  Rune Berge (2 out of 5 patents)

14.  Markus Reinhold (2 out of 4 patents)

15.  Marc Deschler (2 out of 3 patents)


Core Competencies:
CVD Coating Device
Semiconductor Layers
Crystalline Layers
Thin-Film Polymer
Gas-Admission Element
Nano-Technology Equipment
Temperature Management
MOCVD Reactor
Plasma Growth Chambers
Multi-Channel Injection Unit
Graphite-Foam Insulated
Organic Vapor Phase Deposition

39 patents:

1. 8685500 - Method for depositing a thin-film polymer in a low-pressure gas phase (2014-04-01),
2. 8152927 - CVD coating device (2012-04-10),
3. 8052796 - CVD reactor comprising a photodiode array (2011-11-08),
4. 7842135 - Equipment innovations for nano-technology aquipment, especially for plasma growth chambers of carbon nanotube and nanowire (2010-11-30),
5. 7762208 - Loading and unloading apparatus for a coating device (2010-07-27),
6. 7709398 - Process and apparatus for depositing semiconductor layers using two process gases, one of which is preconditioned (2010-05-04),
7. 7625448 - Inlet system for an MOCVD reactor (2009-12-01),
8. 7524532 - Process for depositing thin layers on a substrate in a process chamber of adjustable height (2009-04-28),
9. 7473316 - Method of growing nitrogenous semiconductor crystal materials (2009-01-06),
10. 7410670 - Process and apparatus for depositing single-component or multi-component layers and layer sequences using discontinuous injection of liquid and dissolved starting substances via a multi-channel injection unit (2008-08-12),
11. 7332038 - Device for depositing in particular crystalline layers on one or more, in particular likewise crystalline substrates (2008-02-19),
12. 7294207 - Gas-admission element for CVD processes, and device (2007-11-13),
13. 7282096 - Arrangement comprising a support body and a substrate holder which is driven in rotation and gas-supported thereon (2007-10-16),
14. 7201942 - Coating method (2007-04-10),
15. 7147718 - Device and method for the deposition of, in particular, crystalline layers on, in particular, crystalline substrates (2006-12-12),
Aixtron AG is a leading provider of deposition equipment for the semiconductor industry, specializing in the production of advanced materials for optoelectronic and microelectronic applications. The company focuses on developing innovative technologies that enable the manufacturing of high-performance devices, including LEDs, lasers, and power electronics. Headquartered in Herzogenrath, Germany, Aixtron serves a global market, contributing to advancements in various sectors such as telecommunications, automotive, and renewable energy.
Profile summary based on public USPTO records.

logo

Company Badge

USPTO Data Jan 1 1976 - Sep 29 2026

Aixtron Ag
39 Patents

#2 in Herzogenrath

#1,301 in Germany

#17,413 in the World

Herzogenrath, DE
Herzogenrath, Germany

Aixtron Ag

Forward Citations = 737

41 inventors:

goldMedal Gerhard Karl Strauch (11 out of 15 patents)

silverMedal Johannes Kaeppeler (10 out of 10 patents)

bronzeMedal Holger Jürgensen (8 out of 8 patents)

4.  Gerd Strauch (7 out of 7 patents)

5.  Johannes Käppeler (6 out of 12 patents)

Please report any incorrect information to [email protected]
Loading…