The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2009
Filed:
Jul. 24, 2000
Bernd Schottker, Aachen, DE;
Michael Heuken, Aachen, DE;
Holger Jürgensen, Aachen, DE;
Gerd Strauch, Aachen, DE;
Bernd Wachtendorf, Hsin-Chu, TW;
Bernd Schottker, Aachen, DE;
Michael Heuken, Aachen, DE;
Holger Jürgensen, Aachen, DE;
Gerd Strauch, Aachen, DE;
Bernd Wachtendorf, Hsin-Chu, TW;
Aixtron AG, , DE;
Abstract
What is described here is a process for the initial growth of nitrogenous semiconductor crystal materials in the form ABCNMwherein A, B, C is an element of group II or III, N is nitrogen, M represents an element of group V or VI, and X, Y, Z, W denote the molar fraction of each element of this compound, using a, which are deposited on sapphire, SiC or Si, using various ramp functions permitting a continuous variation of the growth parameters during the initial growth.