Hsin-Chu, Taiwan

Bernd Wachtendorf


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Bernd Wachtendorf: Innovator in Nitrogenous Semiconductor Crystal Materials

Introduction

Bernd Wachtendorf is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the growth of nitrogenous semiconductor crystal materials. His innovative work has implications for various applications in electronics and optoelectronics.

Latest Patents

Wachtendorf holds a patent for a method of growing nitrogenous semiconductor crystal materials. This patent describes a process for the initial growth of these materials in the form ABCNM, where A, B, and C are elements of group II or III, N represents nitrogen, and M denotes an element of group V or VI. The method involves depositing these materials on substrates such as sapphire, SiC, or Si, utilizing various ramp functions that allow for continuous variation of growth parameters during the initial growth phase. He has 1 patent to his name.

Career Highlights

Wachtendorf is currently associated with Aixtron AG, a company known for its advanced deposition equipment for the semiconductor industry. His work at Aixtron AG has positioned him as a key player in the development of innovative semiconductor technologies.

Collaborations

Throughout his career, Wachtendorf has collaborated with esteemed colleagues, including Bernd Schottker and Michael Heuken. These collaborations have further enhanced his research and development efforts in the semiconductor field.

Conclusion

Bernd Wachtendorf's contributions to the growth of nitrogenous semiconductor crystal materials highlight his innovative spirit and dedication to advancing semiconductor technology. His work continues to influence the industry and pave the way for future advancements.

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