The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2014
Filed:
May. 14, 2009
Markus Gersdorff, Herzogenrath, DE;
Markus Gersdorff, Herzogenrath, DE;
Aixtron AG, Herzogenrath, DE;
Abstract
The invention relates to a method for depositing one or more thin layers. In said method, a process gas forming a polymer streams into a deposition chamber () along with a carrier gas by means of a gas inlet element () in order to deposit a thin layer, in particular in the form of a polymer, on the surface (') of a substrate () which lies on a supporting surface (′) of a susceptor, said supporting surface (′) lying opposite the gas inlet element (), at a distance therefrom. In order to allow the coating process to be carried out at substrate temperatures that only slightly exceed the temperature of the supporting surface of the susceptor, the gas inlet element () and/or the supporting surface (′) are/is temperature-controlled in such a way that the temperature (TS) of the supporting surface (′) is lower than the temperature (TG) of the gas inlet element (). More particularly, at a first pressure (P1) prevailing in the deposition chamber () before the process gas penetrates into the deposition chamber (), the substrate () lying on the supporting surface (′) is stabilized, by dissipating heat to the susceptor (), to a substrate temperature (TD) that only slightly exceeds the temperature (TS) of the supporting surface (′) but is significantly lower than the temperature (TG) of the gas inlet element (), whereupon the pressure (P1) in the deposition chamber () is reduced to a process pressure (P2), and the process gas penetrates into the deposition chamber () when the process pressure (P2) has been reached.