Most Cited Patents

Patents 1

We are introducing the most cited patents. A patent forward citation is a valuable metric used to assess the impact and significance of a patent. It represents the number of times other patents have cited the original patent as a reference or source of information. By analyzing the number and nature of forward citations, one can gain a better understanding of the patent’s relevance and the broader impact it has had on subsequent innovations.

This metric came from analyzing utility patent data between January 1, 2002, and July 18, 2023.

a cross-sectional view describing a manufacturing step of a semiconductor device relating to the present invention.

an electronic appliance relating to the present invention.

3,852 citations – Semiconductor device and manufacturing method thereof.

Field of the Invention: Invention relates to a semiconductor using an oxide semiconductor. It also links to an electronic appliance equipped with a semiconductor device.

Date of patent: Mar. 09, 2010

Inventors: Kengo Akimoto, Tatsuya Honda, Norihito Sone.

This invention provides a cost-effective semiconductor device with a simplified manufacturing process. It involves forming a thin-film transistor using an oxide semiconductor film, specifically zinc oxide. The manufacturing method includes forming a gate electrode, a gate-insulating film, and an oxide semiconductor film over a substrate. Additionally, a first conductive film and a second conductive film are formed over the oxide semiconductor film. Notably, the oxide semiconductor film contains a crystallized region within the channel region of the device.

a graph of an out-of-plane XRD pattern of a homologous single-crystal thin film shows the crystallinity.

3,637 citations – Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film.

Date of patent: Jun. 13, 2006

Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kazushige Ueda, Masahiro Hirano, Toshio Kamiya.

The invention is a thin film with a natural-superlattice homologous single-crystal structure. It comprises a complex oxide grown on a ZnO epitaxial thin film or a ZnO single crystal on a single-crystal substrate. The complex oxide, MMO(ZnO), consists of selected elements like Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho, and Y, along with Mn, Fe, Ga, In, and Al. This thin film has applications in electronic devices and X-ray optics, achieved by depositing the complex oxide and applying a thermal anneal treatment.

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2 years ago

Angelina Kushnarova

Angelina Kushnarova (Sverediuk) was born in Ukraine. She graduated from Ternopil Medical University with a specialization in Medicine and completed an internship in Radiology at Lviv University. She worked as a Radiologist, while also working as a web developer.